Osaka Kyoiku University Researcher Information
日本語 ｜ English
Curriculum Vitaes
Profile Information
- Affiliation
- Professor, Division of Math, Sciences, and Information Technology in Education, Osaka Kyoiku University
- Degree
- 修士（工学）(法政大学)Ph.D, Engineering(Hosei University)博士(工学)(法政大学)
- Contact information
- kkushi
cc.osaka-kyoiku.ac.jp - J-GLOBAL ID
- 200901045592031908
- researchmap Member ID
- 5000070697
- External link
Research Interests
7Research Areas
3Research History
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Apr, 2024 - Present
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Apr, 2023 - Present
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Apr, 2023 - Present
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Sep, 2005 - Sep, 2015
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Apr, 2011 - Jul, 2011
Education
1Committee Memberships
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Apr, 2023 - Present
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Jun, 2024 - Oct, 2024
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Jun, 2023 - Oct, 2023
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Jun, 2022 - Oct, 2022
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Apr, 2021
Papers
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Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Jun, 2010 Peer-reviewed
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Physica B: Condensed Matter, May, 2010 Peer-reviewedLead authorCorresponding author
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Solid State Communications, Sep, 2009 Peer-reviewed
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Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, May, 2009 Peer-reviewed
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Solid State Communications, Dec, 2008 Peer-reviewed
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Materials Science Forum, 600-603 1361-1364, Sep, 2008 Peer-reviewed<jats:p>Multiple-energy nitrogen ions (energies:1 to 100 keV and a net concentration:2.24 x 1020 cm-3) are implanted into ZnO bulk single crystals grown by the hydrothermal method. Rutherford backscattering-channeling studies show the presence of displaced Zn atoms (Zni) of about 4 % in as-implanted samples. An A-emission band related to the interstitial oxygen (Oi) is observed at 580 nm in 600 oC-annealed samples, and a new emission appears at 515 nm in 800 oC-annealed samples. It is proposed that the new emission band consists of the superposition of the green band (~525 nm) observed in unimplanted ZnO and the residual A-emission band. In 800 oC-annealed samples, a band to acceptor transition at 3.26 eV is also observed in addition to a donor to acceptor pair transition, suggesting that nitrogen acceptor is located at about 180 meV above the valence band. A thermally stimulated current peak, P1 (165 meV), which has been attributed to a native point defect, observed in unimplanted samples almost disappears in nitrogen-implanted samples annealed at 800 oC.</jats:p>
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Journal of Crystal Growth, Apr, 2008 Peer-reviewed
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KUR Progress report, 2008, 2008
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Physical Review B, Dec 26, 2007 Peer-reviewedLead authorCorresponding author
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Physical Review B, Jun 25, 2007 Peer-reviewed
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Surface Science, May, 2007 Peer-reviewedLead author
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AIP Conference Proceedings, 2007 Peer-reviewed
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Applied Physics Letters, Dec 11, 2006 Peer-reviewed
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physica status solidi (c), Sep, 2006 Peer-reviewedLead author
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Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2005, Aug, 2006 Peer-reviewed
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Applied Physics Letters, Mar 27, 2006 Peer-reviewed
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Nucl. Instr. And Meth. B, 249 132-135, 2006
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Physical Review B, Dec 5, 2005 Peer-reviewed
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Journal of Crystal Growth, Feb, 2005 Peer-reviewed
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AIP Conference Proceedings, 2005 Peer-reviewed
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Physical Review B, Dec 3, 2004 Peer-reviewedLead author
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Acta Crystallographica Section E Structure Reports Online, Aug 15, 2004 Peer-reviewed
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Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Jun, 2004 Peer-reviewed
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Applied Physics Letters, May 3, 2004 Peer-reviewed
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Solid State Communications, Feb, 2004 Peer-reviewed
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Journal of Applied Physics, Mar, 2003 Peer-reviewedLead author
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Applied Physics Letters, Dec 23, 2002 Peer-reviewedLead author
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Solid State Communications, Aug, 2002 Peer-reviewedLead author
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Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, May, 2002 Peer-reviewed
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Journal of Crystal Growth, Apr, 2002 Peer-reviewed
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Journal of Crystal Growth, Apr, 2002 Peer-reviewedLead author
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Applied Physics Letters, Mar 4, 2002 Peer-reviewedLead author
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Solid State Communications, Jun, 2001 Peer-reviewedLead author
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Proc. 25th Int. Conf. Physics of Semiconductors, (Springer-Verlag, Belrin), 168-169, 2001 Lead authorCorresponding author
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Ternary and Multinary Compounds in the 21st Century IPAP Books，vol. 1, 268-273, 2001 Peer-reviewedInvitedLead author
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Applied Physics Letters, Dec 18, 2000 Peer-reviewedLead author
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Applied Physics Letters, Apr 17, 2000 Peer-reviewedLead author
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Journal of Applied Physics, Mar 15, 2000 Peer-reviewed
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Journal of Applied Physics, Mar, 2000 Peer-reviewed
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Japanese Journal of Applied Physics, Jan 1, 2000 Peer-reviewed
Misc.
17Books and Other Publications
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株式会社技術情報協会, Jun 30, 2022★電池を燃やさないための「断熱」，「固体化」，4.5～5Vに耐えられる電極素材，電極－電解質の界面電気抵抗を低減できる材料 ★軟らかい電池 ，温度差などの新しい発電方式の電池 ，2価イオンで動作する・・・などの新しい電池に用いられる材料とは
Presentations
23Teaching Experience
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Phisics Experiment (Osaka Kyoiku University)
Professional Memberships
3Research Projects
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Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C), Japan Society for the Promotion of Science, Apr, 2022 - Mar, 2025
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Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C), Japan Society for the Promotion of Science, Apr, 2015 - Mar, 2018
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Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C), Japan Society for the Promotion of Science, 2010 - 2012
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Grants-in-Aid for Scientific Research Grant-in-Aid for Young Scientists (B), Japan Society for the Promotion of Science, 2006 - 2008
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科学研究費助成事業 萌芽研究, 日本学術振興会, 2005 - 2006